Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN

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	Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN
	Fan WJ ; Li MF ; Chong TC ; Xia JB
刊名	journal of applied physics
	1996
卷号	79 期号:1 页码:188-194
关键词	GALLIUM NITRIDE BAND-GAPS PSEUDOPOTENTIAL CALCULATIONS ALUMINUM NITRIDE SEMICONDUCTORS GROWTH INSULATORS CRYSTALS SILICON DIAMOND
ISSN号	0021-8979
通讯作者	fan wj natl univ singaporedept elect engnctr optoelectr10 kent ridge crescentsingapore 0511singapore.
中文摘要	the electronic properties of wide-energy gap zinc-blende structure gan, a1n, and their alloys ga(1-x)a1(x)n are investigated using the empirical pseudopotential method. electron and hole effective mass parameters, hydrostatic and shear deformation potential constants of the valence band at gamma and those of the conduction band at gamma and x are obtained for gan and ain, respectively. the energies of gamma, x, l conduction valleys of ga(1-x)a1(x)n alloy versus al fraction x are also calculated. the information will be useful for the design of lattice mismatched heterostructure optoelectronic devices based on these materials in the blue light range application. (c) 1995 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15457]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Fan WJ,Li MF,Chong TC,et al. Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN[J]. journal of applied physics,1996,79(1):188-194.
APA	Fan WJ,Li MF,Chong TC,&Xia JB.(1996).Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN.journal of applied physics,79(1),188-194.
MLA	Fan WJ,et al."Electronic properties of zinc-blende GaN, AlN, and their alloys Ga1-xAlxN".journal of applied physics 79.1(1996):188-194.