Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction
	Zhuang Y ; Wang YT ; Jiang DS ; Yang XP ; Jiang XM ; Wu JY ; Xiu LS ; Zheng WL
刊名	applied physics letters
	1996
卷号	68 期号:8 页码:1147-1149
ISSN号	0003-6951
通讯作者	zhuang y chinese acad scinatl res ctr optoelectr technolpob 912beijing 100083peoples r china.
中文摘要	an (a1as/gaas/a1as/a1gaas)/gaas(001) double-barrier superlattice grown by molecular beam epitaxy (mbe) is studied by combining synchrotron radiation and double-crystal x-ray diffraction (dcd). the intensity of satellite peaks is modulated by the wave function of each sublayer in one superlattice period. simulated by the x-ray dynamical diffraction theory, it is discovered that the intensity of the satellite peaks situated near the modulating wave node point of each sublayer is very sensitive to the variation of the layer structural parameters, the accurate layer thickness of each sublayer is obtained with an error less than 1 angstrom. furthermore, x-ray kinematical diffraction theory is used to explain the modulation phenomenon. (c) 1996 american institute of physics.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15451]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zhuang Y,Wang YT,Jiang DS,et al. Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction[J]. applied physics letters,1996,68(8):1147-1149.
APA	Zhuang Y.,Wang YT.,Jiang DS.,Yang XP.,Jiang XM.,...&Zheng WL.(1996).Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction.applied physics letters,68(8),1147-1149.
MLA	Zhuang Y,et al."Study of double barrier superlattice by synchrotron radiation and double-crystal x-ray diffraction".applied physics letters 68.8(1996):1147-1149.