Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy

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	Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy
	Chen NF ; Wang YT ; He HJ ; Lin LY
刊名	japanese journal of applied physics part 2-letters
	1996
卷号	35 期号:10a 页码:l1238-l1240
关键词	gallium arsenide low temperature As interstitials As interstitial couples molecular beam epitaxy X-ray rocking curve lattice parameter GALLIUM-ARSENIDE LAYERS DEPENDENCE
ISSN号	0021-4922
通讯作者	chen nf chinese acad sciinst semicondpob 912beijing 100083peoples r china.
中文摘要	the structural properties of gaas grown at low temperatures by molecular beam epitaxy (ltmbe gaas) were studied. the excess arsenic atoms in ltmbe gaas exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and cause an increase in the lattice parameter of ltmbe gaas. annealing at above 300 degrees c, the arsenic interstitial couples decomposed, and as precipitates formed, resulting in a decrease in the lattice parameter.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15355]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Chen NF,Wang YT,He HJ,et al. Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy[J]. japanese journal of applied physics part 2-letters,1996,35(10a):l1238-l1240.
APA	Chen NF,Wang YT,He HJ,&Lin LY.(1996).Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy.japanese journal of applied physics part 2-letters,35(10a),l1238-l1240.
MLA	Chen NF,et al."Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy".japanese journal of applied physics part 2-letters 35.10a(1996):l1238-l1240.