Effective-mass theory for InAs/GaAs strained coupled quantum dots

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	Effective-mass theory for InAs/GaAs strained coupled quantum dots
	Li SS ; Xia JB ; Yuan ZL ; Xu ZY ; Ge WK ; Wang XR ; Wang Y ; Wang J ; Chang LL
刊名	physical review b
	1996
卷号	54 期号:16 页码:11575-11581
关键词	SELF-ORGANIZED GROWTH ISLAND FORMATION VALENCE BANDS BEAM EPITAXY GAAS MATRIX INAS PHOTOLUMINESCENCE HETEROSTRUCTURES MICROSTRUCTURES SUPERLATTICES
ISSN号	0163-1829
通讯作者	li ss china ctr adv sci & technolworld labpob 8730beijing 100080peoples r china.
中文摘要	in the framework of effective-mass envelope-function theory, the optical transitions of inas/gaas strained coupled quantum dots grown on gaas (100) oriented substrates are studied. at the gamma point, the electron and hole energy levels, the distribution of electron and hole wave functions along the growth and parallel directions, the optical transition-matrix elements, the exciton states, and absorption spectra are calculated. in calculations, the effects due to the different effective masses of electrons and holes in different materials are included. our theoretical results are in good agreement with the available experimental data.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15343]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li SS,Xia JB,Yuan ZL,et al. Effective-mass theory for InAs/GaAs strained coupled quantum dots[J]. physical review b,1996,54(16):11575-11581.
APA	Li SS.,Xia JB.,Yuan ZL.,Xu ZY.,Ge WK.,...&Chang LL.(1996).Effective-mass theory for InAs/GaAs strained coupled quantum dots.physical review b,54(16),11575-11581.
MLA	Li SS,et al."Effective-mass theory for InAs/GaAs strained coupled quantum dots".physical review b 54.16(1996):11575-11581.