Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates
	Xu ZY ; Lu ZD ; Yang XP ; Yuan ZL ; Zheng BZ ; Xu JZ ; Ge WK ; Wang Y ; Wang J ; Chang LL
刊名	physical review b
	1996
卷号	54 期号:16 页码:11528-11531
关键词	QUANTUM-WELLS DOTS ISLANDS PHOTOLUMINESCENCE SURFACES MATRIX
ISSN号	0163-1829
通讯作者	xu zy acad sinicanatl lab superlattices & microstructinst semicondbeijing 100083peoples r china.
中文摘要	we have investigated the temperature dependence of photoluminescence (pl) properties of a number of self-organized inas/gaas heterostructures with inas layer thickness ranging from 0.5 to 3 ml. the temperature dependence of inas exciton emission and linewidth was found to display a significant difference when the inas layer thickness is smaller or larger than the critical thickness around 1.7 ml. the fast redshift of pl energy and an anomalous decrease of linewidth with increasing temperature were observed and attributed to the efficient relaxation process of carriers in multilayer samples, resulting from the spread and penetration of the carrier wave functions in coupled inas quantum dots. the measured thermal activation energies of different samples demonstrated that the inas wetting layer may act as a barrier for the thermionic emission of carriers in high-quality inas multilayers, while in inas monolayers and submonolayers the carriers are required to overcome the gaas barrier to escape thermally from the localized states.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15341]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Xu ZY,Lu ZD,Yang XP,et al. Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates[J]. physical review b,1996,54(16):11528-11531.
APA	Xu ZY.,Lu ZD.,Yang XP.,Yuan ZL.,Zheng BZ.,...&Chang LL.(1996).Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates.physical review b,54(16),11528-11531.
MLA	Xu ZY,et al."Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates".physical review b 54.16(1996):11528-11531.