Rapid thermal annealing of arsenic implanted Si1-xGex epilayers

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	Rapid thermal annealing of arsenic implanted Si1-xGex epilayers
	Zou LF ; Wang ZG ; Sun DZ ; Fan TW ; Liu XF ; Zhang JW
刊名	nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
	1997
卷号	122 期号:4 页码:639-642
关键词	DIFFUSION SILICON SI PRECIPITATION TEMPERATURE
ISSN号	0168-583x
通讯作者	zou lf chinese acad sciinst semicondlab semicond mat scipob 912beijing 100083peoples r china.
中文摘要	rapid thermal annealing of arsenic implanted si1-xgex was studied by secondary ion-mass spectroscopy (sims) and spreading resistance probe (srp) over a wide range of ge fractions (0-43%). redistribution of the implanted arsenic was followed as a function of ge content and annealing temperature. arsenic concentration profiles from sims indicated that the behavior of implanted arsenic in si1-xgex after rta was different from that in si, and the si1-xgex samples exhibited box-shaped, concentration-dependent diffusion profiles with increasing ge content. the maximum concentrations of electrically active arsenic in si1-xgex was found to decrease with increasing ge content. experimental results showed that the arsenic diffusion is enhanced with increasing temperature for certain ge content and strongly dependent on ge content, and the higher ge content, the faster as diffusion.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15265]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zou LF,Wang ZG,Sun DZ,et al. Rapid thermal annealing of arsenic implanted Si1-xGex epilayers[J]. nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,1997,122(4):639-642.
APA	Zou LF,Wang ZG,Sun DZ,Fan TW,Liu XF,&Zhang JW.(1997).Rapid thermal annealing of arsenic implanted Si1-xGex epilayers.nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,122(4),639-642.
MLA	Zou LF,et al."Rapid thermal annealing of arsenic implanted Si1-xGex epilayers".nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 122.4(1997):639-642.