A theoretical model for the tilt of the GaAs/Si epilayers

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	A theoretical model for the tilt of the GaAs/Si epilayers
	Hao MS ; Shao CL ; Soga T ; Jimbo T ; Umeno M ; Liang JW
刊名	journal of crystal growth
	1997
卷号	178 期号:3 页码:276-279
关键词	GaAs/Si tilt MISORIENTATION EPITAXY SI(001)
ISSN号	0022-0248
中文摘要	the crystallographic tilt of the epilayers with respect to their substrates has been observed in many heteroepitaxial systems. many models have been proposed to explain this phenomenon, but none of them is suitable for the large mismatched system, such as gaas/si. here a new model is proposed for gaas/si epilayers, which can also be used in other large mismatched systems. the magnitude of the tilt calculated from this model coincide well with the experimental results. especially, this model can correctly predict the tilt direction of the gaas/si epilayers.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-17
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/15177]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Hao MS,Shao CL,Soga T,et al. A theoretical model for the tilt of the GaAs/Si epilayers[J]. journal of crystal growth,1997,178(3):276-279.
APA	Hao MS,Shao CL,Soga T,Jimbo T,Umeno M,&Liang JW.(1997).A theoretical model for the tilt of the GaAs/Si epilayers.journal of crystal growth,178(3),276-279.
MLA	Hao MS,et al."A theoretical model for the tilt of the GaAs/Si epilayers".journal of crystal growth 178.3(1997):276-279.