GAAS/GAALAS P-N-P-N NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT-DENSITY

	GAAS/GAALAS P-N-P-N NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT-DENSITY
	WANG SW ; WU RH ; ZHU QG ; ZHANG QS ; LI ZY ; TIAN HL
刊名	iee proceedings-i communications speech and vision
	1982
卷号	129 期号:6 页码:306-309
ISSN号	0956-3776
通讯作者	wang sw chinese acad sciinst semicondbeijingpeoples r china
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14787]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	WANG SW,WU RH,ZHU QG,et al. GAAS/GAALAS P-N-P-N NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT-DENSITY[J]. iee proceedings-i communications speech and vision,1982,129(6):306-309.
APA	WANG SW,WU RH,ZHU QG,ZHANG QS,LI ZY,&TIAN HL.(1982).GAAS/GAALAS P-N-P-N NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT-DENSITY.iee proceedings-i communications speech and vision,129(6),306-309.
MLA	WANG SW,et al."GAAS/GAALAS P-N-P-N NEGATIVE-RESISTANCE LASER WITH LOW THRESHOLD CURRENT-DENSITY".iee proceedings-i communications speech and vision 129.6(1982):306-309.