BAND DISPERSION IN THE RECURSION METHOD | |
WANG YL | |
刊名 | physical review b |
1991 | |
卷号 | 43期号:15页码:12464-12469 |
关键词 | ELECTRONIC-STRUCTURE SEMICONDUCTORS SILICON DISLOCATIONS ENVIRONMENT DEFECTS STATES |
ISSN号 | 0163-1829 |
通讯作者 | wang yl chinese acad sciinst semicondpob 912beijing 100083peoples r china |
中文摘要 | the advantages of the supercell model in employing the recursion method are discussed in comparison with the cluster model. a transformation for changing complex bloch-sum seed states to real seed states in recursion calculations is presented and band dispersion in the recursion method is extracted with use of the lanczos algorithm. the method is illustrated by the band structure of gaas in the empirical tight-binding parametrized model. in the supercell model, the treatment of boundary conditions is discussed for various seed-state choices. the method is useful in applying tight-binding techniques to systems with substantial deviations from periodicity. |
学科主题 | 半导体物理 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-11-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/14309] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | WANG YL. BAND DISPERSION IN THE RECURSION METHOD[J]. physical review b,1991,43(15):12464-12469. |
APA | WANG YL.(1991).BAND DISPERSION IN THE RECURSION METHOD.physical review b,43(15),12464-12469. |
MLA | WANG YL."BAND DISPERSION IN THE RECURSION METHOD".physical review b 43.15(1991):12464-12469. |
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