PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS

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	PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS
	ZHUANG WH ; CHEN C ; TENG D ; YU J ; LI YZ
刊名	journal of vacuum science & technology a-vacuum surfaces and films
	1991
卷号	9 期号:3 页码:983-986
关键词	BAND-GAP PHOTOREFLECTANCE
ISSN号	0734-2101
通讯作者	zhuang wh chinese acad sciinst semicondbeijingpeoples r china
中文摘要	a high energy shift of the band-band recombination has been observed in the photoluminescence (pl) spectra of the strained inp epilayer on gaas by metalorganic chemical vapor deposit. the strain determined by pl peak is in good agreement with calculated thermal strain. the surface photovoltalic spectra gives the information about energy gap, lattice mismatching, and composition of heteroepilayers, diffusion length, surface, and interface recombination velocity of minority carriers of heteroepitaxy layers.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14291]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	ZHUANG WH,CHEN C,TENG D,et al. PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS[J]. journal of vacuum science & technology a-vacuum surfaces and films,1991,9(3):983-986.
APA	ZHUANG WH,CHEN C,TENG D,YU J,&LI YZ.(1991).PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS.journal of vacuum science & technology a-vacuum surfaces and films,9(3),983-986.
MLA	ZHUANG WH,et al."PHOTOLUMINESCENCE AND SURFACE PHOTOVOLTAIC SPECTRA OF STRAINED INP ON GAAS".journal of vacuum science & technology a-vacuum surfaces and films 9.3(1991):983-986.