ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT

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	ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT
	LI JM
刊名	journal of applied physics
	1991
卷号	70 期号:1 页码:511-513
关键词	CZOCHRALSKI-GROWN SILICON MICRODEFECTS DISLOCATIONS BEHAVIOR WAFERS
ISSN号	0021-8979
通讯作者	li jm chinese acad sciinst semicondbeijing 100083peoples r china
中文摘要	the influence of oxygen defects on the resistivity and mobility of silicon wafers is discussed. grinding processes were performed on the surfaces of samples in order to obtain the information on interior defects of the samples. spreading resistivity and hall measurements prove that sio(x) complexes alone result in resistivity increase and mobility decrease. deep level transient spectroscopy experiments prove that sio(x) complexes alone are electrically active. a mechanism of carrier scattering by electrically active sio(x) complex is proposed to explain the changes of resistivity and mobility.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14287]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	LI JM. ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT[J]. journal of applied physics,1991,70(1):511-513.
APA	LI JM.(1991).ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT.journal of applied physics,70(1),511-513.
MLA	LI JM."ELECTRICAL CHARACTERS OF OXYGEN DEFECTS IN SILICON SUBJECTED TO INTRINSIC GETTERING TREATMENT".journal of applied physics 70.1(1991):511-513.