THE ADSORPTION OF O2 ON FESI SURFACES
HSU CC ; DING SA ; MA MS ; WU JX ; LIU XM ; JI MR
刊名surface science
1992
卷号269期号:0页码:1022-1031
关键词METAL-SILICIDES OXIDATION OXYGEN GROWTH TRACER EELS XPS
ISSN号0039-6028
通讯作者hsu cc chinese acad sci natl lab surface phys pob 603 beijing peoples r china
中文摘要the initial adsorption stages and the interaction of oxygen on fesi surfaces have been studied as a function of exposure and annealing temperature using a variety of techniques including hreels, aes, leed, xps and ups. o2 was found to adsorb dissociatively on the fesi surfaces at room temperature. the whole adsorption process can be divided into four stages. heating promotes the oxidation of si, and a thin sio2 overlayer is formed on the surface when annealed at 450-degrees-c, while all feox species are reduced. models for adsorbed atomic o on the fesi(100) surface exposed to different oxygen exposures have been put forward to account for the observed experimental results.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-11-15
内容类型期刊论文
源URL[http://ir.semi.ac.cn/handle/172111/14191]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
HSU CC,DING SA,MA MS,et al. THE ADSORPTION OF O2 ON FESI SURFACES[J]. surface science,1992,269(0):1022-1031.
APA HSU CC,DING SA,MA MS,WU JX,LIU XM,&JI MR.(1992).THE ADSORPTION OF O2 ON FESI SURFACES.surface science,269(0),1022-1031.
MLA HSU CC,et al."THE ADSORPTION OF O2 ON FESI SURFACES".surface science 269.0(1992):1022-1031.
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