PHOTOREFLECTANCE SPECTROSCOPY OF SEMIINSULATING GAAS

	PHOTOREFLECTANCE SPECTROSCOPY OF SEMIINSULATING GAAS
	WANG RZ ; JIANG DS
刊名	journal of applied physics
	1992
卷号	72 期号:8 页码:3826-3828
关键词	MODULATION SPECTROSCOPY ELECTROREFLECTANCE SEMICONDUCTORS TEMPERATURE CHARGE LEVEL
ISSN号	0021-8979
通讯作者	wang rz beijing normal univdept physbeijing 100088peoples r china
中文摘要	clear observations of photoreflectance (pr) spectra due to excitonic transitions in semi-insulating gaas bulk materials are reported. the modulation mechanism is attributed to the electromodulation induced by the dember effect. this study indicates that the pr spectroscopy provides an important method for characterizing the crystal quality of high-resistivity gaas.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14165]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	WANG RZ,JIANG DS. PHOTOREFLECTANCE SPECTROSCOPY OF SEMIINSULATING GAAS[J]. journal of applied physics,1992,72(8):3826-3828.
APA	WANG RZ,&JIANG DS.(1992).PHOTOREFLECTANCE SPECTROSCOPY OF SEMIINSULATING GAAS.journal of applied physics,72(8),3826-3828.
MLA	WANG RZ,et al."PHOTOREFLECTANCE SPECTROSCOPY OF SEMIINSULATING GAAS".journal of applied physics 72.8(1992):3826-3828.