EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON

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	EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON
	WONG YW ; YANG XQ ; CHAN PW ; TONG KY
刊名	applied surface science
	1993
卷号	64 期号:3 页码:259-263
关键词	REACTIVE ATMOSPHERE BORON IRRADIATION SEMICONDUCTORS JUNCTIONS
ISSN号	0169-4332
通讯作者	wong yw hong kong polytechdept appl physhung humhong kong
中文摘要	solid films containing phosphorus impurities were formed on p-type silicon wafer surface by traditional spin-on of commercially available dopants. the doping process is accomplished by irradiating the sample with a 308 nm xecl pulsed excimer laser. shallow junctions with a high concentration of doped impurities were obtained. the measured impurity profile was ''box-like'', and is very suitable for use in vlsi devices. the characteristics of the doping profile against laser fluence (energy density) and number of laser pulses were studied. from these results, it is found that the sheet resistance decreases with the laser fluence above a certain threshold, but it saturates as the energy density is further increased. the junction depth increases with the number of pulses and the laser energy density. the results suggest that this simple spin-on dopant pre-deposition technique can be used to obtain a well controlled doping profile similar to the technique using chemical vapor in pulsed laser doping process.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14117]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	WONG YW,YANG XQ,CHAN PW,et al. EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON[J]. applied surface science,1993,64(3):259-263.
APA	WONG YW,YANG XQ,CHAN PW,&TONG KY.(1993).EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON.applied surface science,64(3),259-263.
MLA	WONG YW,et al."EXCIMER-LASER DOPING OF SPIN-ON DOPANT IN SILICON".applied surface science 64.3(1993):259-263.