ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS

	ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS
	XU SJ ; JIANG DS ; LI GH ; ZHANG YH ; LUO JS
刊名	chinese physics letters
	1993
卷号	10 期号:7 页码:433-436
关键词	OSCILLATIONS
ISSN号	0256-307x
通讯作者	xu sj acad sinicainst semicondnatl lab superlattices & microstructbeijing 100083peoples r china
中文摘要	we present distinct evidence of anticrossing behavior for excitonic transitions due to resonant coupling of heavy-hole ground levels in a biased gaas/al0.35ga0.65as/gaas (50/40/100 angstrom) asymmetric coupled-double-quantum-wells p-i-n structure by using photoluminescence spectra. the minimum level splitting is about 2.5 mev.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14039]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	XU SJ,JIANG DS,LI GH,et al. ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS[J]. chinese physics letters,1993,10(7):433-436.
APA	XU SJ,JIANG DS,LI GH,ZHANG YH,&LUO JS.(1993).ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS.chinese physics letters,10(7),433-436.
MLA	XU SJ,et al."ANTICROSSING DUE TO RESONANT COUPLING OF HOLE LEVELS IN ASYMMETRIC COUPLED-QUANTUM-WELLS".chinese physics letters 10.7(1993):433-436.