HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS

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	HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS
	SONG ZZ ; ZHAN FQ ; YU G ; KONG GL ; CHEN GH
刊名	journal of non-crystalline solids
	1993
卷号	166 期号:0 页码:305-308
关键词	AMORPHOUS-SILICON CONDUCTIVITY CHANGES
ISSN号	0022-3093
通讯作者	song zz lanzhou univdept physlanzhou 730000peoples r china
中文摘要	by using the technique of elastic recoil detection (erd), we have measured the hydrogen profiles in a-si:h/a-si structure samples annealed at various temperatures with and without electrical bias, and investigated the influence of electrical bias on hydrogen diffusion. the results show that hydrogen diffusion in a-si is significantly enhanced by the action of electrical bias. the existence of the excess carriers, which are introduced by electrical injection, is considered to be responsible for the enhancement of hydrogen diffusion, and the microprocess of hydrogen transport has been exploited.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14025]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	SONG ZZ,ZHAN FQ,YU G,et al. HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS[J]. journal of non-crystalline solids,1993,166(0):305-308.
APA	SONG ZZ,ZHAN FQ,YU G,KONG GL,&CHEN GH.(1993).HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS.journal of non-crystalline solids,166(0),305-308.
MLA	SONG ZZ,et al."HYDROGEN DIFFUSION IN A-SI-H/A-SI STRUCTURE UNDER ELECTRICAL BIAS".journal of non-crystalline solids 166.0(1993):305-308.