RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE

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	RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE
	XU TB ; ZHU PR ; ZHOU JS ; LI DQ ; GONG B ; WAN Y ; MU SM ; ZHAO QT ; WANG ZL
刊名	nuclear instruments & methods in physics research section b-beam interactions with materials and atoms
	1994
卷号	90 期号:0 页码:392-395
关键词	ION-IMPLANTATION AMORPHIZATION
ISSN号	0168-583x
通讯作者	xu tb chinese acad sciinst physbeijing 100080peoples r china
中文摘要	the lattice damage accumulation in gaas and al0.3ga0.7as/gaas superlattices by 1 mev si+ irradiation at room temperature and 350-degrees-c has been studied. for irradiations at 350-degrees-c, at lower doses the samples were almost defect-free after irradiation, while a large density of accumulated defects was induced at a higher dose. the critical dose above which the damage accumulation is more efficient is estimated to be 2 x 10(15) si/cm2 for gaas, and is 5 x 10(15) si/cm2 for al0.8ga0.7as/gaas superlattice for implantation with 1.0 mev si ions at 350-degrees-c. the damage accumulation rate for 1 mev si ion implantation in al0.3ga0.7as/gaas superlattice is less than that in gaas.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-11-15
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/14003]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	XU TB,ZHU PR,ZHOU JS,et al. RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE[J]. nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,1994,90(0):392-395.
APA	XU TB.,ZHU PR.,ZHOU JS.,LI DQ.,GONG B.,...&WANG ZL.(1994).RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE.nuclear instruments & methods in physics research section b-beam interactions with materials and atoms,90(0),392-395.
MLA	XU TB,et al."RBS STUDIES OF THE LATTICE DAMAGE CAUSED BY 1 MEV SI+ IMPLANTATION INTO AL0.3GA0.7AS/GAAS SUPERLATTICES AT ELEVATED-TEMPERATURE".nuclear instruments & methods in physics research section b-beam interactions with materials and atoms 90.0(1994):392-395.