Electron tunneling through double magnetic barriers on the surface of a topological insulator

CORC > 半导体研究所 > 中国科学院半导体研究所 > 半导体超晶格国家重点实验室

	Electron tunneling through double magnetic barriers on the surface of a topological insulator
	Wu ZH (Wu Zhenhua) ; Peeters FM (Peeters F. M.) ; Chang K (Chang Kai)
刊名	physical review b
	2010
卷号	82 期号:11 页码:art. no. 115211
关键词	SINGLE DIRAC CONE GRAPHENE BI2TE3 PHASE
通讯作者	wu, zh, chinese acad sci, inst semicond, sklsm, pob 912, beijing 100083, peoples r china
合作状况	国际
英文摘要	we study electron tunneling through a planar magnetic and electric barrier on the surface of a three-dimensional topological insulator. for the double barrier structures, we find (i) a directional-dependent tunneling which is sensitive to the magnetic field configuration and the electric gate voltage, (ii) a spin rotation controlled by the magnetic field and the gate voltage, (iii) many fabry-perot resonances in the transmission determined by the distance between the two barriers, and (iv) the electrostatic potential can enhance the difference in the transmission between the two magnetization configurations, and consequently lead to a giant magnetoresistance. points (i), (iii), and (iv) are alike with that in graphene stemming from the same linear-dispersion relations.; submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-11-02t00:36:51z no. of bitstreams: 1 electron tunneling through double magnetic barriers on the surface of a topological insulator.pdf: 935179 bytes, checksum: 6afc288a479d35352836d3e58045b85a (md5); approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-11-02t02:01:32z (gmt) no. of bitstreams: 1 electron tunneling through double magnetic barriers on the surface of a topological insulator.pdf: 935179 bytes, checksum: 6afc288a479d35352836d3e58045b85a (md5); made available in dspace on 2010-11-02t02:01:32z (gmt). no. of bitstreams: 1 electron tunneling through double magnetic barriers on the surface of a topological insulator.pdf: 935179 bytes, checksum: 6afc288a479d35352836d3e58045b85a (md5) previous issue date: 2010; this work was supported by the nsf of china, the flemish science foundation (fwo-vl), and the belgian science policy.; 国际
学科主题	半导体物理
收录类别	SCI
资助信息	this work was supported by the nsf of china, the flemish science foundation (fwo-vl), and the belgian science policy.
语种	英语
公开日期	2010-11-02 ; 2011-04-28
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/13901]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wu ZH ,Peeters FM ,Chang K . Electron tunneling through double magnetic barriers on the surface of a topological insulator[J]. physical review b,2010,82(11):art. no. 115211.
APA	Wu ZH ,Peeters FM ,&Chang K .(2010).Electron tunneling through double magnetic barriers on the surface of a topological insulator.physical review b,82(11),art. no. 115211.
MLA	Wu ZH ,et al."Electron tunneling through double magnetic barriers on the surface of a topological insulator".physical review b 82.11(2010):art. no. 115211.