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题名	基于高阶光栅的高功率单纵模半导体激光器的研究
作者	贾鹏
学位类别	博士
答辩日期	2015-05
授予单位	中国科学院大学
导师	秦莉
关键词	半导体激光器 高阶光栅 单纵模激光器 空间相干性
其他题名	Study of high power single longitudinal mode semiconductor laser with high order Bragg gratings
学位专业	凝聚态物理
中文摘要	高阶光栅单纵模半导体激光器是一种新型的单纵模半导体激光器，它是一种通过在普通法布里-珀罗腔激光器的光波导上引入周期性折射率微扰对激光器的纵向模式进行选择，实现稳定单纵模工作的激光器。这种激光器可有效的解决传统边发射激光器所面临的多纵模激光输出等问题。另外，由于高阶表面光栅的制备工艺简单、性能稳定，使其适用于与其它光电子器件进行单片集成，这种新型激光器件具有广阔的应用前景。 本文主要针对高阶光栅单纵模半导体激光器进行了光栅结构设计、器件制备及测试分析，具体的研究内容和结果如下： （1）采用传输矩阵理论和散射理论的方法对高阶光栅单纵模半导体激光器光波导结构的光学特性进行了分析，获得了高阶光栅耦合光波导的设计和计算方法。 （2）采用非对称大光腔波导激光器结构，制备的2 mm腔长、100 μm条宽高阶光栅分布布拉格反射型（DBR）激光器单管，实现了连续输出功率213 mW、光谱线宽40 pm、边模抑制比达到42 dB的单纵模激射。 （3）设计并制备了一种双波长高阶光栅分布布拉格反射型（DBR）激光器，其腔长为2 mm、条宽为100 μm，在注入电流为1.2 A条件下，实现了单边连续输出功率88 mW双波长激射，双波长的3 dB线宽都为40 pm，边模抑制比分别为35 dB和39 dB，波长间隔不小于0.58 nm。并采用拉曼光谱测试技术对高阶光栅耦合半导体激光器的可靠性进行了分析。 （4）采用非对称大光腔波导激光器结构，制备的2 mm腔长、100 μm条宽高阶光栅分布反馈型（DFB）激光器单管，实现了单边连续输出功率144 mW、光谱线宽40 pm、边模抑制比达到29 dB的单纵模激射。 （5）根据部分相干光理论，首次提出一种测试高功率单纵模半导体激光器空间相干度的方法，利用该方法对高功率单纵模半导体激光器的空间相干度进行测试，发现该方法测试出的空间相干度比传统方法误差最高小27倍。又设计并制备一种高功率三角形VCSEL列阵，对其空间相干特性进行了定量的研究。
英文摘要	High order Bragg gratings (HOBGs) single longitudinal-mode semiconductor laser is a new type of single longitudinal mode lasers. In order to achieve single longitudinal-mode lasing, a set of periodic refractive index perturbation is integrated into the waveguide of normal Fabry-Perot cavity laser. The HOBGs lasers have strong longitudinal-mode discrimination that operating in a stable single longitudinal mode. The multiple longitudinal-mode lasing problem of traditional edge emitting laser is solved by HOBGs lasers. Furthermore, HOBGs single longitudinal mode lasers can be integrated with other optoelectronic devices for sample preparation and stable optical property. So this new type of laser devices has wide application prospects. In this paper, HOBGs laser is designed and fabticated. The power and spectrum characteristics of HOBGs laser are tested. The main work is as follows: 1) The optical properties of HOBGs coupling optical waveguide are anayzed by transmission matrix theroy and scattering theroy. And the design and calculation method of HOBGs coupling optical waveguide is obtained. 2) High order Bragg gratings (HOBGs) distributed Bragg reflector (DBR) lasers at around 956 nm has been fabricated. 100 μm wide broad-stripe and 2 mm longitudinal laser cavity of HOBGs lasers are defined by i-line lithography and dry etching. Continuous-wave power of 213 mW has achieved, and having a 3 dB spectrum width of less than 40 pm at 900 mA, and operating in a stable single longitudinal mode with the side-mode suppression ratio (SMSR) of 42 dB. 3) Dual-wavelength operation HOBGs distributed Bragg reflector (DBR) lasers have been fabricated with broad-stripe width of 100 μm and laser cavity length of 2 mm. Continuous-wave power of 88 mW has achieved at injection current of 1.2 A, the 3 dB spectrum linewidth of the two wavelength modes are both 40 pm. And the side mode suppression ratio (SMSR) of shorter wavelength mode and long wavelength mode are larger than 35 dB and 39dB, respectively. The wavelength difference of two lasing modes is larger than 0.58 nm. In order to analyze the reliability of Grating coupled semiconductor lasers (GCSLs), the chips in different preparation stages and products of GCSLs are tested by Raman spectroscopy. 4) High order Bragg gratings (HOBGs) distributed feedback (DFB) lasers at around 976 nm has been fabricated. 100 μm wide broad-stripe and 2 mm longitudinal laser cavity of HOBGs lasers are fabricated. Continuous-wave power of 144 mW has achieved at injection current 1.2 A, and having a 3 dB spectrum width of less than 40 pm at 1.2 A, and the side-mode suppression ratio (SMSR) of 29 dB. 5) The spatial coherence properties of high power single longitudinal-mode semiconductor lasers were studied based on the theorem of partially coherent light. We firstly proposed an integral average value method (IAVM) based on the Young's interference experiment and spatial coherence theory. Comparing with our IAVM, the largest relatively error of the traditional analysis method is 27 times larger than IAVM. And a kind of high power vertical cavity surface emitting lasers (VCSELs) triangle-arrays has been fabricated，and the spatial coherence properties of VCSELs triangle-arrays is studied.
公开日期	2015-12-24
内容类型	学位论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/48845]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	贾鹏. 基于高阶光栅的高功率单纵模半导体激光器的研究[D]. 中国科学院大学. 2015.

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